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參數資料
| 型號： | 195D106x0016x2T |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | ULTRALOW-POWER LOW-NOISE 50-mA LOW-DROPOUT LINEAR REGULATORS |
| 中文描述： | 超低功耗低噪音50 mA的低壓降線性穩壓器 |
| 文件頁數： | 1/17頁 |
| 文件大小： | 310K |
| 代理商： | 195D106X0016X2T |
TPS79015, TPS79018, TPS79025, TPS79028, TPS79030
ULTRALOW-POWER LOW-NOISE 50-mA
LOW-DROPOUT LINEAR REGULATORS
SLVS299B – SEPTEMBER 2000 – REVISED MAY 2001
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
50-mA Low-Dropout Regulator
Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V
Output Noise Typically 56
μ
V
RMS
(TPS79030)
Only 17
μ
A Quiescent Current at 50 mA
1
μ
A Quiescent Current in Standby Mode
Dropout Voltage Typically 57 mV at 50 mA
(TPS79030)
Over Current Limitation
–40
°
C to 125
°
C Operating Junction
Temperature Range
5-Pin SOT-23 (DBV) Package
description
The TPS790xx family of low-dropout (LDO)
voltage regulators offers the benefits of
low-dropout voltage, ultralow-power operation,
low-output noise, and miniaturized packaging.
These regulators feature low-dropout voltages
and ultralow quiescent current compared to
conventional LDO regulators. An internal resistor,
in conjunction with an external bypass capacitor,
creates a low-pass filter to reduce the noise. The
TPS79030 exhibits only 56
μ
V
RMS
of output
voltage noise using 0.01
μ
F bypass and 10
μ
F
output capacitors. Offered in a 5-terminal small
outline integrated-circuit SOT-23 package, the
TPS790xx
series
devices
micropower operations, low output noise, and
where board space is limited.
are
ideal
for
The usual PNP pass transistor has been replaced
by a PMOS pass element. Because the PMOS
pass element behaves as a low-value resistor, the
dropout voltage is very low, typically 57 mV at
50 mA of load current (TPS79030), and is directly
proportional to the load current. The quiescent
current is ultralow (17
μ
A typically) and is stable
over the entire range of output load current (0 mA
to 50 mA). Intended for use in portable systems
such as laptops and cellular phones, the
ultralow-dropout voltage feature and ultralow-
power operation result in a significant increase in
system battery operating life.
Copyright
2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
3
2
4
5
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
BYPASS
0
100
200
400
600
800
1000
1200
1k
f – Frequency – Hz
10k
100k
VI = 4 V
Co = 4.7
μ
F
C(byp) = 0.1
μ
F
TPS78930
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
IO = 1 mA
IO = 50 mA
V
O
μ
TJ – Junction Temperature –
°
C
15
22
TPS79030
GROUND CURRENT
vs
JUNCTION TEMPERATURE
G
μ
VI = 4 V
Co = 4.7
μ
F
21
20
19
18
17
16
IO = 1 mA
IO = 50 mA
–40
5
–25
20
35
65
110 125
50
–10
80
95
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