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參數資料
型號: 2MBI600U4G-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 600 A, 1200 V, N-CHANNEL IGBT
封裝: M248, 10 PIN
文件頁數: 1/6頁
文件大小: 448K
代理商: 2MBI600U4G-120
1
1MBI1200U4C-120
IGBT Modules
IGBT MODULE (U series)
1200V / 1200A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20
V
Collector current
Ic
Continuous
Tc=25°C
1600
A
Tc=80°C
1200
Ic pulse
1ms
Tc=25°C
3200
Tc=80°C
2400
-Ic
1200
-Ic pulse
1ms
2400
Collector power dissipation
Pc
1 device
7350
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
2500
VAC
Screw torque
Mounting (*2)
5.75
Nm
Main Terminals (*2)
10
Sense Terminals (*2)
2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminal : 8-10 Nm (M8), Sense Terminal : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Zero gate voltage collector current
ICES
VGE = 0V, VCE = 1200V
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V, VGE = ±20V
-
2400
nA
Gate-Emitter threshold voltage
VGE (th)
VCE = 20V, IC = 1200mA
5.5
6.5
7.5
V
Collector-Emitter saturation voltage
VCE (sat)
(main terminal) VGE = 15V
IC = 1200A
Tj=25°C
-
2.08
2.25
V
Tj=125°C
2.28
-
VCE (sat)
(chip)
Tj=25°C
-
1.90
2.05
Tj=125°C
2.10
-
Input capacitance
Cies
VGE = 0V, VCE = 10V, f = 1MHz
-
135
-
nF
Turn-on time
ton
VCC = 600V, IC = 1200A
VGE = ±15V, Tj = 125°C
Rgon = 2, Rgoff = 1
-
0.90
-
s
tr
-
0.50
-
Turn-off time
toff
-
0.80
-
tf
-
0.20
-
Forward on voltage
VF
(main terminal) VGE = 0V
IF = 1200A
Tj=25°C
-
1.83
2.00
V
Tj=125°C
-
1.93
-
VF
(chip)
Tj=25°C
-
1.65
1.80
Tj=125°C
-
1.75
-
Reverse recovery time
trr
IF = 1200A
-
0.35
-
s
Lead resistance, terminal-chip
R lead
-
0.15
-
m
Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Thermal resistance (1device)
Rth(j-c)
IGBT
-
0.017
°C/W
FWD
-
0.030
Contact thermal resistance (1device)
Rth(c-f)
with Thermal Compound (*3)
-
0.006
-
Note *3: This is the value which is dened mounting on the additional cooling n with thermal compound.
相關PDF資料
PDF描述
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2MBI600VN-120-50 600 A, 1200 V, N-CHANNEL IGBT
2MBI75F-060 75 A, 600 V, N-CHANNEL IGBT
2MBI75U4A-120 100 A, 1200 V, N-CHANNEL IGBT
2MBP600UN-120V 600 A, 1200 V, N-CHANNEL IGBT
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