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參數資料
| 型號： | 2N3634UB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 169K |
| 代理商： | 2N3634UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
T4-LDS-0156 Rev. 2 (101452)
Page 1 of 5
DEVICES
LEVELS
2N3634
2N3635
2N3636
2N3637
JAN
2N3634L
2N3635L
2N3636L
2N3637L
JANTX
2N3634UB
2N3635UB
2N3636UB
2N3637UB
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
VCEO
140
175
Vdc
Collector-Base Voltage
VCBO
140
175
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation
UB:
@ TA = +25°C
@ TC = +25°C
PT **
1.0
5.0
1.5
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
Vdc
IC = 10mAdc
2N3634, 2N3635
2N3636, 2N3637
140
175
Collector-Base Cutoff Current
ICBO
ηAdc
μAdc
VCB = 100Vdc
VCB = 140Vdc
VCB = 175Vdc
2N3634, 2N3635
2N3636, 2N3637
100
10
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 5.0Vdc
IEBO
50
10
ηAdc
μAdc
Collector-Emitter cutoff Current
VCE = 100Vdc
ICEO
10
μAdc
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
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| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3635 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3635JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3635JV | 制造商:Motorola 功能描述:2N3635 MOT'88 N10D9H |
| 2N3635L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk |
| 2N3635LJTXV | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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