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參數資料
| 型號： | 2N3702 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 238K |
| 代理商： | 2N3702 |
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2N3702 Information
Category Transistors
2N3702 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 25
V(BR)CBO (V) : 40
I(C) Max. (A) : 500m
Absolute Max. Power Diss. (W) : 620m
Maxim um Operating Tem p (шC) : 150ю
I(CBO) Max. (A) : 100nШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 60
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 50m
@V(CE) (V) (Test Condition) : 5.0
f(T) Min. (Hz) Transition Freq : 100M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 12p
@V(CB) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Package Style : TO-92
Mounting Style : T
Description :
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3702_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| 2N3702_D26Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3702_D27Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3702_D75Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3702_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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