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參數資料
| 型號： | 2N3792 |
| 英文描述： | PNP Silicon Epitaxial Base Power Transistor(PNP 硅外延功率型晶體管) |
| 中文描述： | 進步黨硅外延基地功率晶體管（民進黨硅外延功率型晶體管） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 15K |
| 代理商： | 2N3792 |
80V
80V
7V
10A
4A
150W
65 to 200°C
200°C
06/00
2N3792
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
CBO
V
CEO(sus)
V
EBO
I
C
I
B
P
TOT
T
stg,
T
j
,
Collector – Base Voltage(I
E
= 0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage(I
C
= 0)
Collector Current
Base Current
Total Power Dissipation at T
case
= 25°C
Storage Temperature
Junction Temperature
40.01 (1.575)
Max.
4.47 (0.176)
Rad.
2 Pls.
22.23 (0.875)
Max.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
11.18 (0.44)
1.63 (0.064)
1.52 (0.060)
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
16.97 (0.668)
16.87 (0.664)
4.09 (0.161)
3.84 (0.151)
2 Pls
11.18 (0.440)
10.67 (0.420)
26.67
(1.050)
Max.
2
1
PNP SILICON EPITAXIAL BASE
POWER TANSISTORS
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
PIN 1
—
Base
PIN 2
—
Emitter
Case is Collector.
APPLICATIONS
Linear Power and Switching Applications
MECHANICAL DATA
Dimensions in mm(inches)
TO3
THERMAL CHARACTERISTICS
R
q
JC
Thermal Resistance, Junction to Case
1.17
°
C/W
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PDF描述 |
|---|---|
| 2N3792 | SILICON PNP POWER TRANSISTORS |
| 2N3792 | PNP HIGH POWER SILICON TRANSISTOR |
| 2N3792 | POWER TRANSISTORS(10A,150W) |
| 2N3798 | Chip Type 2C2605 Geometry 0220 Polarity NPN |
| 2N2604 | Small Signal Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3792 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N3792_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
| 2N3792CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N3792JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3792SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
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