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參數(shù)資料
| 型號(hào)： | 2N4150SJ |
| 廠(chǎng)商： | SEMICOA CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 10000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 407K |
| 代理商： | 2N4150SJ |
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4150S
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N4150SJ)
JANTX level (2N4150SJX)
JANTXV level (2N4150SJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power, High voltage
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 3101
Reference document:
MIL-PRF-19500/394
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
70
Volts
Collector-Base Voltage
VCBO
100
Volts
Emitter-Base Voltage
VEBO
10
Volts
Collector Current, Continuous
IC
10
A
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
1
5.7
W
mW/
°C
Power Dissipation, TC = 25°C
Derate linearly above 100
°C
PT
5
50
W
mW/
°C
Thermal Resistance
RθJA
RθJC
.175
.020
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
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