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參數(shù)資料
| 型號： | 2N4261UB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 151K |
| 代理商： | 2N4261UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
T4-LDS-0150 Rev. 1 (092064)
Page 1 of 4
DEVICES
LEVELS
2N4261
2N4261UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
Collector Current
IC
30
mAdc
Total Power Dissipation @ T
A = +25°C
PT
0.2
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
°C
Note: Consult 19500/511 for Thermal Performance Curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
15
Vdc
Collector-Base Cutoff Current
VCB = 15Vdc
ICBO
10
μAdc
Emitter-Base Cutoff Current
VEB = 4.5Vdc
IEBO
10
μAdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc
ICEX1
50
ηAdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 2.0Vdc
ICEX2
5
ηAdc
TO-72
2N4261
3 PIN
2N4261UB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4261UB_05 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N4261UBC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SMALL SIGNAL SILICON TRANSISTOR |
| 2N4261UBJANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 15V 0.03A 3-Pin CSOT-23 |
| 2N４２６４ | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| 2N4264/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
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