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參數資料
| 型號： | 2N5052SMDR4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 封裝： | HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 10K |
| 代理商： | 2N5052SMDR4 |
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14
(0.16
3
)
3.84
(0.15
1
)
10.69
(0.4
21)
10.39
(0.4
09)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02
(0.6
31)
15.73
(0.6
19)
0.50 (0.020)
0.26 (0.010)
0.76
(0
.030)
min.
13
2
2N5052SMD
Bipolar NPN Device.
V
CEO =
200V
I
C = 2A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
200
V
I
C(CONT)
2
A
h
FE
@ 5/0.75 (V
CE / IC)
25
100
-
f
t
10M
Hz
P
D
40
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar NPN Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD1 (TO276AB)
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相關代理商/技術參數 |
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|---|---|
| 2N5055 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-222AB |
| 2N5056 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N5057 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N5058 | 功能描述:兩極晶體管 - BJT Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5059 | 功能描述:兩極晶體管 - BJT Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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