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參數資料
| 型號： | 2N6043 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 174K |
| 代理商： | 2N6043 |
1
Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc —
VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043
VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044
VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
Symbol
2N6040
2N6043
2N6041
2N6044
2N6042
2N6045
Unit
Collector–Emitter Voltage
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
8.0
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
75
0.60
Watts
W/
_C
Operating and Storage Junction,
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.67
_C/W
Thermal Resistance, Junction to Ambient
θJA
57
_C/W
(1) Indicates JEDEC Registered Data.
80
0
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TC
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6040/D
Motorola, Inc. 1997
2N6040
thru
2N6042
2N6043
thru
2N6045
*Motorola Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
75 WATTS
*
CASE 221A–06
TO–220AB
PNP
NPN
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6044 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2N6050R1 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6050 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6050 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6051 | 12 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6043G | 功能描述:達林頓晶體管 8A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6044 | 功能描述:達林頓晶體管 NPN Darl Pwr RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6045 | 功能描述:達林頓晶體管 NPN Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6045G | 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6046 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 20A 3PIN TO-63 - Bulk |
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