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參數資料
型號: 2N6053-JQR-BR1
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
封裝: HERMETIC SEALED, METAL, TO-3, 2 PIN
文件頁數: 1/1頁
文件大小: 11K
代理商: 2N6053-JQR-BR1
2N6053
Bipolar PNP Device.
V
CEO =
60V
I
C = 8A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
60
V
I
C(CONT)
8
A
h
FE
@ 3/4 (V
CE / IC)
750
18000
-
f
t
4M
Hz
P
D
100
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar PNP Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
相關PDF資料
PDF描述
2N6053-JQR-B 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N6053.MOD 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N6053-JQR-AR1 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N6053-JQR-A 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N6053-JQR 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
相關代理商/技術參數
參數描述
2N6054 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3
2N6055 功能描述:達林頓晶體管 NPN Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2N6055_12 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:POWER COMPLEMENTARY SILICON TRANSISTORS
2N6056 制造商:ON Semiconductor 功能描述:TRANSISTOR DARLINGTON TO-3
2N6056/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Darlington Silicon Power Transistor
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