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參數資料
| 型號： | 2N7002WT/R7 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 162K |
| 代理商： | 2N7002WT/R7 |
PAGE . 1
STAD-JUL.26.2007
2N7002W
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=5
R
DS(ON), VGS@4.5V,IDS@75mA=7.5
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-323 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : 72W
60V N-Channel Enhancement Mode MOSFET
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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