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參數資料
| 型號： | 2SB1221 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 70 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92NL-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 46K |
| 代理商： | 2SB1221 |
1
Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0
±
0.2
1
±
0
0
±
0
8
±
0
1.27
1
2
3
1.27
4.0
±
0.2
0.45
+0.15
–0.1
0.45
+0.15
–0.1
2
±
0
0.7
±
0.1
2.54
±
0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–250
–200
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –12V, I
E
= 0
I
C
= –100
μ
A, I
B
= 0
I
E
= –1
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–200
–5
60
50
typ
80
5
max
–2
220
–1.5
10
Unit
μ
A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
h
FE
60 ~ 150
100 ~ 220
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| 2SB1252 | Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SB1253 | Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SB1254 | Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SB1255 | Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SB1282 | Darlington Transistor(【 4A PNP) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB12210QA | 功能描述:TRANS PNP 200VCEO 70MA TO-92NL RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1221-Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1223 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220ML -70V -4A 20W BCE |
| 2SB1224 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220ML -70V -7A 25W BCE |
| 2SB1226 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220ML -110V -3A 20W BCE |
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