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參數資料
型號: 2SC3311A
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency amplification)
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: S-TYPE PACKAGE-3
文件頁數: 1/2頁
文件大?。?/td> 36K
代理商: 2SC3311A
1
Transistor
2SC3311A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SA1309A
I
Features
G
Optimum for high-density mounting.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
typ
0.1
150
3.5
max
0.1
1
460
0.3
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
相關PDF資料
PDF描述
2SC3312 ECONOLINE: RSZ/P - 1kVDC
2SC3313 Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type)
2SC3314 Silicon NPN epitaxial planer type(For high-frequency amplification)
2SC3315 Silicon NPN epitaxial planer type(For high-frequency amplification)
2SC3324 NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
相關代理商/技術參數
參數描述
2SC3311A MATS 制造商:Distributed By MCM 功能描述:60V .1A .3W Ecb 2Sc3311A Matsushita Transistor S-Type
2SC3311A0A 功能描述:TRANS NPN AF AMP 50V 100MA NEW S RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC3311AHA 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC3311AIQST 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SC3311AIRTA 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
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