- 您現在的位置：買賣IC網 > PDF目錄371510 > 2SC4502 (PANASONIC CORP) Silicon NPN epitaxial planer type(For mtermediate frequency amplification) PDF資料下載
參數資料
| 型號： | 2SC4502 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For mtermediate frequency amplification) |
| 中文描述： | 50 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 40K |
| 代理商： | 2SC4502 |
1
Transistor
2SC4502
Silicon NPN epitaxial planer type
For mtermediate frequency amplification
I
Features
G
High transition frequency f
T
.
G
Large collector power dissipation P
C
.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
Ratings
50
45
4
50
1
150
–55 ~ +150
Unit
V
V
V
mA
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 10
μ
A
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –10mA, f = 58MHz
min
50
45
4
20
300
22
typ
max
100
100
0.4
1.5
30
Unit
nA
V
V
V
V
MHz
pF
dB
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2
±
0.1
0.65
0.45
0.1
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4519 | High-Speed Switching Applications |
| 2SC4521 | High-Speed Switching Applications |
| 2SC4522 | High-Speed Switching Applications |
| 2SC4524 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2SC4525 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4505T100 | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR NPN 2SC4505 MPT3 |
| 2SC4505T100P | 功能描述:兩極晶體管 - BJT NPN 400V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4505T100Q | 功能描述:兩極晶體管 - BJT NPN 400V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4511 | 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 80V 6A TO220F |
| 2SC4517 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 3A 30W BCE |
發布緊急采購，3分鐘左右您將得到回復。