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參數資料
| 型號： | 2SC4755 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high speed switching) |
| 中文描述： | 200 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 42K |
| 代理商： | 2SC4755 |
1
Transistor
2SC4755
Silicon NPN epitaxial planer type
For high speed switching
I
Features
G
High-speed switching.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
2.1
±
0.1
1
±
0
0
±
0
0
±
0
0
+
–
0
+
–
2
±
0
1.25
±
0.1
0.425
0.425
1
3
2
0
0
0
0
0.2
±
0.1
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
5
300
200
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
Symbol
I
CBO
I
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
Refer to the measurment circuit
min
40
200
typ
0.17
0.76
500
2
17
15
7
max
0.1
0.1
200
0.25
1.0
4
Unit
μ
A
μ
A
V
V
MHz
pF
ns
ns
ns
Marking symbol :
DV
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
40 ~ 80
60 ~ 120
90 ~ 200
Marking Symbol
DVP
DVQ
DVR
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