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參數(shù)資料
| 型號： | 2SC5462 |
| 英文描述： | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 中文描述： | 晶體管|晶體管|叩| 700V的五（巴西）總裁|甲一（c）|至247VAR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | 2SC5462 |
1
Power Transistors
2SC5410, 2SC5410A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q
High breakdown voltage, and high reliability through the use of a
glass passivation layer
q
High-speed switching
q
Wide area of safe operation (ASO)
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1500
600
5
30
25
15
200
3.5
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
Conditions
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 12A
IC = 12A, IB = 3A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 3A, IB2 = –6A
min
8
typ
3
max
50
1
50
16
3
1.5
4.0
0.3
Unit
A
mA
A
V
MHz
s
2SC5410
2SC5410A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
6.0
10.0
26.0
±0.5
20.0
±0.5
1.5
2.5
Solder
Dip
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
4.0
2.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
2.0
φ 3.3±0.2
3.0
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| 2SC5464FTY | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5464O | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-416 |
| 2SC5464Y | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
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相關代理商/技術參數(shù) |
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| 2SC5466(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5488A-TL-H | 功能描述:兩極晶體管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5488-TL-E | 制造商:ON Semiconductor 功能描述:BIP NPN 70MA 10V FT=7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 70MA 10V FT=7G |
| 2SC5490A-TL-H | 功能描述:兩極晶體管 - BJT BIP NPN 30MA 10V FT=8G RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5501A-4-TR-E | 功能描述:兩極晶體管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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