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參數資料
型號: 2SD1893
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type Darlington(For power amplification)
中文描述: 6 A, 110 V, NPN, Si, POWER TRANSISTOR
封裝: TOP-3, FULL PACK-3
文件頁數: 1/3頁
文件大小: 54K
代理商: 2SD1893
1
Power Transistors
2SD1893
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1253
I
Features
G
Optimum for 40W HiFi output
G
High foward current transfer ratio h
FE
: 5000 to 30000
G
Low collector to emitter saturation voltage V
CE(sat)
: <2.5V
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
130
110
5
10
6
50
3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 130V, I
E
= 0
V
CE
= 110V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 5mA
I
C
= 5A, I
B
= 5mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 5A, I
B1
= 5mA, I
B2
= –5mA,
V
CC
= 50V
min
110
2000
5000
typ
20
1.4
4.5
0.8
max
100
100
100
30000
2.5
3.0
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
5000 to 15000 8000 to 30000
T
C
=25
°
C
Ta=25
°
C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±
0.3
11.0
±
0.2
2
±
0
1
±
0
1
S
3
0
1
±
0
5.0
±
0.2
3.2
10.9
±
0.5
5.45
±
0.3
3
2
1
1.1
±
0.1
2.0
±
0.2
0.6
±
0.2
2.0
±
0.1
φ
3.2
±
0.1
B
E
C
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2SD1898T100R 功能描述:兩極晶體管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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