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參數資料
| 型號： | 2SD2067 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency output amplification) |
| 中文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COPMLIANT, MT-2-A1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 54K |
| 代理商： | 2SD2067 |
1
Transistor
2SD2067 (Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
I
Features
G
Darlington connection.
G
High foward current transfer ratio h
FE
.
G
Large peak collector current I
CP
.
G
High collector to emitter voltage V
CEO
.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
120
100
5
3
2
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 1A
*2
I
C
= 1A, I
B
= 1mA
*2
I
C
= 1A, I
B
= 1mA
*2
min
120
100
5
4000
typ
max
0.1
1
40000
1.5
2
Unit
μ
A
μ
A
V
V
V
V
V
*1
h
FE
Rank classification
Rank
Q
R
S
h
FE
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
1.2
±
0.1
0.65
0.45
0.1
+
–
Note:In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Internal Connection
B
C
E
≈
200
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2067(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:2SD2067 (Tentative) - Silicon NPN epitaxial planer type |
| 2SD20670RA | 功能描述:TRANS NPN 100VCEO 2A MT-2 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2069 | 制造商:ROHM 制造商全稱:Rohm 功能描述:1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
| 2SD2069P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-92 |
| 2SD2069Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-92 |
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