- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369169 > 2SD2556Q TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-252VAR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2556Q |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-252VAR |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 5A條一（c）|至252VAR |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 61K |
| 代理商： | 2SD2556Q |
1
Power Transistors
2SD2523
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I
Features
G
Incorporating a built-in damper diode
G
High breakdown voltage, and high reliability through the use of a
glass passivation layer
G
High-speed switching
G
Wide area of safe operation (ASO)
G
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Reverse peak base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP*
I
BP
I
BP
P
C
T
j
T
stg
Ratings
1700
1700
5
6
15
4
–3
90
3
150
–55 to +150
Unit
V
V
V
A
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
*
Non-repetitive peak
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
Symbol
I
CBO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1700V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 1.6A
I
C
= 5A, I
B
= 1.6A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 5A, I
Bend
= 1.6A, L
leak
= 5
μ
H
I
C
= 6A, I
B
= 0
min
5
6
3
typ
3
max
50
1
25
10
5
1.5
12
0.8
–2
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
V
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±
0.5
2
±
0
2
±
0
2
1
±
0
3
±
0
5
±
0
2
0
±
0
2
2
1
3.0
±
0.3
φ
3.2
±
0.1
4
5.45
±
0.3
1
2
3
5.45
±
0.3
1.1
±
0.1
2.0
±
0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±
0.1
C
B
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2573P | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-126VAR |
| 2SD2573Q | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2573R | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-126VAR |
| 2SD2592S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2598Q | TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | SC-71 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2560 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 150V 15A 3-Pin (3+Tab) TO-3P Bulk 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 150V 15A 3-Pin (3+Tab) TO-3P Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN AUDIO/GP MT-100 TO-3P |
| 2SD2561 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 150V 17A 3-Pin MT-200 Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 150V 17A MT200 |
| 2SD2562 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 150V 15A TO3PF |
| 2SD256500A | 功能描述:TRANS NPN 400VCEO 500MA MT-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD25730QA | 功能描述:TRANS NPN 60VCEO 3A MT-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。