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參數資料
| 型號： | 2SD2565 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type(For high voltage-withstand switching) |
| 中文描述： | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | 2SD2565 |
1
Transistor
2SD2565
Silicon NPN triple diffusion planer type
For high voltage-withstand switching
I
Features
G
High collector to base voltage V
CBO
.
G
High collector to emitter voltage V
CEO
.
G
Large collector power dissipation P
C
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*1
T
j
T
stg
Ratings
400
400
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
I
C
= 100
μ
A, I
E
= 0
I
C
= 500
μ
A, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 30mA
I
C
= 250mA, I
B
= 50mA
*
I
C
= 250mA, I
B
= 50mA
*
V
CB
= 30V, I
E
= –20mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
I
C
= 100mA
I
B1
= 10mA, I
B2
= –10mA
V
CC
= 200V
min
400
400
5
30
typ
30
6
0.8
3.7
0.6
max
1.5
1.5
20
Unit
V
V
V
–
V
V
MHz
pF
μ
S
μ
S
μ
S
*1
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2
±
0.1
0.65
0.45
0.1
+
–
Note:In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
*
Pulse measurement
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| 2SD256500A | 功能描述:TRANS NPN 400VCEO 500MA MT-2 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD25730QA | 功能描述:TRANS NPN 60VCEO 3A MT-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2576 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2578 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR2SD2578-RG |
| 2SD2578RG | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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