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參數資料
| 型號： | 5SLY12M3300 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 125 A, 3300 V, SILICON, RECTIFIER DIODE |
| 封裝： | 13.60 X 13.60 MM, DIE-1 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 53K |
| 代理商： | 5SLY12M3300 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
3300 V
IF
=
125 A
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA 1676-00 May 08
Ultra low losses
Fast and soft reverse-recovery
Large SOA
Passivation: SIPOS nitride plus polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
3300
V
Continuous forward current
IF
125
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
250
A
Junction temperature
Tvj
-40
125
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
2.05
V
Continuous forward voltage
VF
IF = 125 A
Tvj = 125 °C
2.2
V
Tvj = 25 °C
50
A
Continuous reverse current
IR
VR = 3300 V
Tvj = 125 °C
2.5
mA
Tvj = 25 °C
175
A
Peak reverse recovery current
Irr
Tvj = 125 °C
205
A
Tvj = 25 °C
90
C
Recovered charge
Qrr
Tvj = 125 °C
140
C
Tvj = 25 °C
680
ns
Reverse recovery time
trr
Tvj = 125 °C
880
ns
Tvj = 25 °C
105
mJ
Reverse recovery energy
Erec
IF = 125 A,
VR = 1800 V,
di/dt = 640 A/s,
Lσ = 1200 nH,
Inductive load,
Switch:
2x 5SMY12M3300
Tvj = 125 °C
175
mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLY 12M3300
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