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參數資料
| 型號： | 5Z27 |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | 3-10B1A, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 139K |
| 代理商： | 5Z27 |
5Z27,5Z30
2006-11-09
1
TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION
5Z27, 5Z30
POWER SURGE SUPPRESSOR
- - - designed for use as a reverse power transient suppressor to protect
automotive electrical equipment from overvoltage conditions.
Excellent Clamp Voltage Characteristics
High Power Capability
Rapidly Surge Absorption
Excellent Surge Responsibility
Various Lead Types
NonStandard Voltage Available
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Allowable Power Dissipation (Note 1)
P
5
W
Non-Repetitive Peak Reverse Surge
Current (Ta=25°C)
(Fig.1)
IRSM
62
A
Junction Temperature
Tj
40~150
°C
Storage Temperature
Tstg
40~150
°C
Note 1: Lead tip temperature
TL=25°C
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Fig.1
MARKING
Abbreviation Code
Part No.
5Z27
5Z30
Unit: mm
JEDEC
JEITA
TOSHIBA
3-10B1A
Weight: 2.7 g (typ.)
5Z27
Part No. (or abbreviation code)
Lot No.
Cathode mark
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 5Z30 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON DIFFUSED JUNCTION (POWER SURGE SUPPRESSOR) |
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