- 您現在的位置：買賣IC網 > PDF目錄366392 > AM28F512-150EE (ADVANCED MICRO DEVICES INC) 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory PDF資料下載
參數資料
| 型號： | AM28F512-150EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數： | 1/35頁 |
| 文件大小： | 484K |
| 代理商： | AM28F512-150EE |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
FINAL
Publication#
11561
Issue Date:
January 1998
Rev:
G
Amendment/
+2
Am28F512
512 Kilobit (64 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
I
High performance
— 70 ns maximum access time
I
CMOS Low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
I
Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
I
10,000 write/erase cycles minimum
I
Write and erase voltage 12.0 V
±
5%
I
Latch-up protected to 100 mA
from -1 V to V
CC
+1 V
I
Flasherase
Electrical Bulk Chip-Erase
— One second typical chip-erase
I
Flashrite Programming
— 10 μs typical byte-program
— One second typical chip program
I
Command register architecture for
microprocessor/microcontroller compatible
write interface
I
On-chip address and data latches
I
Advanced CMOS flash memory technology
— Low cost single transistor memory cell
I
Automatic write/erase pulse stop timer
GENERAL DESCRIPTION
The Am28F512 is a 512 K bit Flash memory orga-
nized as 64 Kbytes of 8 bits each. AMD’s Flash mem-
ories offer the most cost-effective and reliable read/
write non-volatile random access memory. The
Am28F512 is packaged in 32-pin PDIP, PLCC, and
TSOP versions. It is designed to be reprogrammed
and erased in-system or in standard EPROM pro-
grammers. The Am28F512 is erased when shipped
from the factory.
The standard Am28F512 offers access times as fast as
70 ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the Am28F512 has separate chip enable (CE#) and
output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F512 uses a command register to manage this
functionality, while maintaining a standard JEDEC
Flash Standard 32-pin pinout. The command register
allows for 100% TTL level control inputs and fixed
power supply levels during erase and programming.
AMD’s Flash technology reliably stores memory con-
tents even after 10,000 erase and program cycles. The
AMD cell is designed to optimize the erase and pro-
gramming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal
electric fields for erase and programming operations
produces reliable cycling. The Am28F512 uses a
12.0V±5% V
PP
high voltage input to perform the
Flasherase and Flashrite algorithms.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 mA on ad-
dress and data pins from -1 V to V
CC
+1 V.
The Am28F512 is byte programmable using 10 ms pro-
gramming pulses in accordance with AMD’s Flashrite
programming algorithm. The typical room temperature
programming time of the Am28F512 is one second.
The entire chip is bulk erased using 10 ms erase pulses
according to AMD’s Flasherase algorithm. Typical era-
sure at room temperature is accomplished in less than
one second. The windowed package and the 15-20
minutes required for EPROM erasure using ultra-violet
light are eliminated.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as inputs to an internal state-machine which
controls the erase and programming circuitry. During
相關PDF資料 |
PDF描述 |
|---|---|
| AM28F512-150EEB | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F512-150EI | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F512-150EIB | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70 |
| AM28F512-150FC | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70 |
| AM28F512-150FCB | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM28F512-200JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:64K X 8 FLASH 12V PROM, 200 ns, PQCC32 |
| AM28F512-90JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:64K X 8 FLASH 12V PROM, 90 ns, PQCC32 |
| AM29 | 制造商:Distributed By MCM 功能描述:REFRIGERATR DOOR GASKET DIRECT |
| AM290 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| AM29000 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Am29000 and Am29005? Processor Data Sheet |
發布緊急采購，3分鐘左右您將得到回復。