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參數資料
| 型號： | Am29LV004T-90REEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 3.0伏，只引導扇區閃存 |
| 文件頁數： | 1/36頁 |
| 文件大小： | 455K |
| 代理商： | AM29LV004T-90REEB |
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PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
20510
Issue Date:
March 1998
Rev:
D
Amendment/
+1
Am29LV004
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
I
High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
I
Package option
— 40-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
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| Am29LV004B-90REEB | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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| Am29LV008BT-70RFEB | HDWR ENDCAP LEFT FOR SER 3U BLK |
| Am29LV008BB-70RFEB | HDWR ENDCAP RIGHT FOR SER 3U BLK |
| AM29LV008BB-120EC | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數 |
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| AM29LV008BB-120ECT | 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV008BB-80EC | 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B - Bulk |
| AM29LV008BB-90ED | 制造商:Spansion 功能描述:Flash Memory IC |
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