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參數資料
| 型號： | APT40N60B2CFG |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, T-MAX, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 191K |
| 代理商： | APT40N60B2CFG |
050-7236
Rev
A
5-2005
FINAL DATA SHEET WITH MOS 7 FORMAT
600V 40A 0.110
APT40N60B2CF
APT40N60LCF
APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 500A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 20A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C)
Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT40N60B2CF(G)_LCF(G)
600
40
26
80
±30
417
3.33
-55 to 150
260
80
20
1
690
Ultra Low RDS(ON)
Intrinsic Fast-Recovery Body Diode
Low Miller Capacitance
Extreme Low Reverse Recovery Charge
Ultra Low Gate Charge, Qg
Ideal For ZVS Applications
Avalanche Energy Rated
Popular T-MAX or TO-264 Package
Extreme dv/dt Rated
Super Junction FREDFET
MIN
TYP
MAX
600
0.110
4.2
3400
±100
3
4
5
APT Website - http://www.advancedpower.com
C
Power Semiconductors
O
O LMOS
G
D
S
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
T-MaxTM
TO-264
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT40N60JCU2 | 功能描述:MOSFET N-CH 600V 40A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT40N60JCU3 | 功能描述:MOSFET N-CH 600V 40A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT40N60LCF | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT40N60LCFG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT40SM120B | 功能描述:MOSFET N-CH 1200V 41A TO247 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:碳化硅 （SiC） 漏源極電壓（Vdss）:1200V（1.2kV） 電流 - 連續漏極（Id）（25°C 時）:41A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:100 毫歐 @ 20A，20V 不同 Id 時的 Vgs（th）（最大值）:3V @ 1mA（標準） 不同 Vgs 時的柵極電荷（Qg）:130nC @ 20V 不同 Vds 時的輸入電容（Ciss）:2560pF @ 1000V 功率 - 最大值:273W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:TO-247-3 供應商器件封裝:TO-247 標準包裝:1 |
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