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參數資料
| 型號： | BCY59C |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Bipolar NPN Device in A Hermetically sealed TO18 Metal Package |
| 中文描述： | 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封裝： | TO-18, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 30K |
| 代理商： | BCY59C |
Underside View
Pin 1 – Emitter
PAD 2 – Base
PAD 3 – Collector
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
Intended for use in audio input stages, driver
stages and low noise input applications. The
TO-18 (TO-206AA)
MECHANICAL DATA
Dimensions in mm (inches)
BCY59
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5253
Issue 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO
Collector - Emitter Voltage (IB =0)
45V
VBEO
Emitter - Base Voltage (IC =0)
7V
IC
Collector Current
200mA
PTOT
Total Power Dissipation @ Tamb ≤ 25°C
390mW
@ Tc ≤ 45°C
1W
TJ, TSTG
Maximum Junction And Storage Temperature
-55°C to 175°C
RθJC
Thermal Resistance Junction to Case
150°C/W
RθJA
Thermal Resistance Junction to Ambient
385°C/W
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33
(0
.2
10)
4.
32
(0
.1
70)
12
.7
(
0
.500
)
mi
n.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
GENERAL PURPOSE,
SMALL SIGNAL, NPN TRANSISTOR
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BCY59CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 |
| BCY59DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed |
| BCY59DD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | CHIP |
| BCY59IX | 功能描述:兩極晶體管 - BJT NPN Low Noise Audio RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCY59-IX | 功能描述:THROUGH-HOLE TRANSISTOR-SMALL SI 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態:在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:45V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:700mV @ 2.5mA，100mA 電流 - 集電極截止（最大值）:10nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:630 @ 10mA，1V 功率 - 最大值:1W 頻率 - 躍遷:150MHz 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-206AA，TO-18-3 金屬罐 供應商器件封裝:TO-18 標準包裝:2,000 |
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