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參數(shù)資料
| 型號： | BY249-800 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes general purpose |
| 中文描述： | 7 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 39K |
| 代理商： | BY249-800 |
Philips Semiconductors
Product specification
Rectifier diodes
general purpose
BY249 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
High thermal cycling performance
Low thermal resistance
V
R
= 300 V / 600 V / 800 V
V
F
≤
1.05 V
I
F(AV)
= 7 A
I
FSM
≤
60 A
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
rectifier diodes. The devices are
intended for low frequency power
rectifier applications.
PIN
DESCRIPTION
1
cathode
2
anode
The BY249 series is supplied in the
conventional
leaded
(TO220AC) package.
SOD59
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.UNIT
-300
-600
300
UNIT
BY249
-800
800
V
RSM
Peak non-repetitive reverse
voltage
Peak repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
RMS forward current
Peak repetitive forward
current
Peak non-repetitive forward
current.
-
600
V
V
RRM
-
300
600
800
V
V
RWM
V
R
I
F(AV)
I
F(RMS)
I
FRM
-
-
-
-
-
200
200
500
500
7
11
60
700
700
V
V
A
A
A
sinusoidal; a = 1.57; T
mb
≤
131 C
sinusoidal; a = 1.57;
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 150 C prior to
surge; with reapplied V
RWM(max)
t = 10 ms
-
-
60
66
A
A
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction
temperature
-
18
150
150
A
2
s
C
C
-40
-
k
1
a
2
1
tab
2
1
Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
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