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參數資料
| 型號： | CPV363MU |
| 廠商： | International Rectifier |
| 英文描述： | IGBT SIP MODULE Ultra-Fast IGBT |
| 中文描述： | IGBT的高級督察模塊超快速IGBT |
| 文件頁數： | 1/8頁 |
| 文件大小： | 453K |
| 代理商： | CPV363MU |
C-149
IGBT SIP MODULE
Features
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
—
—
0.1
20 (0.7)
Max.
3.5
5.5
—
—
Units
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
CS
(MODULE)
Wt
°C/W
g (oz)
TM
soft ultrafast diodes
Output Current in a Typical 5.0 kHz Motor Drive
7.65 A
RMS
per phase (2.4 kW total) with T
C
= 90°C, T
J
= 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Product Summary
PD - 5.023B
Fast IGBT
CPV363MF
Thermal Resistance
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
16
8.7
50
50
6.1
50
±20
2500
36
14
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
V
RMS
W
-40 to +150
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbfin (0.55-0.8 Nm)
Absolute Maximum Ratings
3
6
7
13
19
18
15
10
16
4
9
12
D1
D3
D5
D2
D4
D6
Q1
Q2
Q3
Q4
Q5
Q6
1
IMS-2
Revision 1
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相關PDF資料 |
PDF描述 |
|---|---|
| CPV364M4K | IGBT SIP MODULE |
| CPV364M4U | IGBT SIP MODULE |
| CPV364MM | Short Circuit Rated Fast IGBT |
| CPV364MF | IGBT SIP MODULE Fast IGBT |
| CPV364MK | IGBT SIP MODULE Short Circuit Rated UltraFast IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CPV364M4F | 功能描述:IGBT SIP MODULE 600V 15A IMS-2 RoHS:否 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| CPV364M4FPBF | 制造商:Vishay Intertechnologies 功能描述:CPV364M4FPbF Series 600 V 27 A Through Hole IGBT SIP Module |
| CPV364M4K | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2 制造商:Vishay Semiconductors 功能描述:TRANS IGBT MOD N-CH 600V 24A 13PIN IMS-2 - Bulk 制造商:Vishay Semiconductors 功能描述:IGBT MODULE HEX IMS-2 |
| CPV364M4KPBF | 功能描述:IGBT SIP MODULE 600V 13A IMS-2 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| CPV364M4U | 功能描述:IGBT SIP MODULE 600V 10A IMS-2 RoHS:否 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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