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參數資料
型號: CR3PM-12
文件頁數: 1/5頁
文件大小: 70K
代理商: CR3PM-12
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
CR3PM
APPLICATION
TV sets, control of household equipment such as electric blankets, other general purpose control
applications
8
1. With gate to cathode resistance R
GK
=220
.
I
T (AV)
...........................................................................3A
V
DRM
..............................................................400V/600V
I
GT
.........................................................................100
μ
A
V
iso
........................................................................ 1500V
UL Recognized: File No. E80276
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
c
=103
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a
=25
°
C, AC 1 minute, each terminal to case
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
V
Ratings
4.7
3.0
70
24.5
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
2.0
1500
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
8
1
DC off-state voltage
8
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
(T
a
=25
°
C, unless otherwise noted)
8
400
500
320
400
320
12
600
720
480
600
480
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
φ
3.2±0.2
1.3 MAX
0.8
2.54
1
3
5
1
8
10.5 MAX
5.2
4
23
1
2
1
3
1
2
3
CATHODE
ANODE
GATE
1
2.54
2.8
0.5
2.6
Measurement point of
case temperature
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