
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
CR6PM
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
I
T (AV)
...........................................................................6A
V
DRM
..............................................................400V/600V
I
GT
..........................................................................10mA
V
iso
........................................................................ 1500V
UL Recognized: File No. E80276
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
(T
a
=25
°
C, unless otherwise noted)
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
c
=85
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a
=25
°
C, AC 1 minute, each terminal to case
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
V
Ratings
9.4
6
90
34
5
0.5
6
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
φ
3.2±0.2
1.3 MAX
0.8
2.54
1
3
5
1
8
10.5 MAX
5.2
4
23
1
2
1
3
1
2
3
CATHODE
ANODE
GATE
1
2.54
2.8
0.5
2.6
Measurement point of
case temperature