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參數資料
型號: EDI2CG272128V15D1
英文描述: 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V,15ns,同步/同步脈沖靜態RAM模塊(流通結構))
中文描述: 2x128Kx72,3.3VS數控/ s的數控突發流量通過(2x128Kx72,3.3伏,15納秒,同步/同步脈沖靜態內存模塊(流通結構))
文件頁數: 1/11頁
文件大小: 172K
代理商: EDI2CG272128V15D1
EDI2CG272128V
1
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
August 2000 Rev.0
ECO#13088
The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst
SRAM, 72 position DIMM (144 contacts) Module, small outline.
The Module contains four (4) Synchronous Burst Ram Devices,
packaged in the industry standard JEDEC 14mmx20mm TQFP
placed on a Multilayer FR4 Substrate. The module architecture is
defined as a Sync/Sync Burst, Flow-Through, with support for
either linear or sequential burst. This module provides High
Performance, 2-1-1-1 accesses when used in Burst Mode, and
used as a Synchronous Only Mode, provides a high performance
cost advantage over BiCMOS aysnchronous device architectures.
Synchronous Only operations are performed via strapping ADSC
Low, and ADSP / ADV High, which provides for Ultra Fast Accesses
in Read Mode while providing for internally self-timed Early
Writes.
Synchronous/Synchronous Burst operations are in relation to an
externally supplied clock, Registered Address, Registered Global
Write, Registered Enables as well as an Asynchronous Output
enable. This Module has been defined for Quad Word access in
both read and write operations.
FEATURES
s 2x128Kx72 Synchronous, Synchronous Burst
s Flow-Through Architecture
s Linear and Sequential Burst Support via MODE pin
s Access Speed(s): TKHQV = 8.5, 9, 12, 15ns
s Clock Controlled Registered Bank Enables (E1, E2)
s Clock Controlled Registered Address
s Clock Controlled Registered Global Write (GW)
s Aysnchronous Output Enable (G)
s Internally Self-timed Write
s Individual Bank Sleep Mode Enables (ZZ1, ZZ2)
s Gold Lead Finish
s 3.3V
±10% Operation
s Common Data I/O
s High Capacitance (30pF) Drive, at Rated Access Speed
s Single Total Array Clock
s Multiple Vcc and Gnd
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through
相關PDF資料
PDF描述
EDI2CG272128V85D1 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V,8.5ns,同步/同步脈沖靜態RAM模塊(流通結構))
EDI2CG272128V9D1 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V,9ns,同步/同步脈沖靜態RAM模塊(流通結構))
EDI2CG27264V10D1 2x64Kx72, 3.3V,10ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V,10ns,同步/同步脈沖靜態RAM模塊)
EDI2CG27264V12D1 2x64Kx72, 3.3V,12ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V,12ns,同步/同步脈沖靜態RAM模塊)
EDI2CG27264V85D1 2x64Kx72, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V,8.5ns,同步/同步脈沖靜態RAM模塊)
相關代理商/技術參數
參數描述
EDI2CG272128V85D1 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM
EDI2CG272128V9D1 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM
EDI2CG272128V-D1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SSRAM Modules
EDI2CG472128V 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4 Megabyte Sync/Sync Burst, Dual Key DIMM
EDI2CG472128V10D2 制造商:EDI 功能描述:
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