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參數資料
| 型號： | EDI2CG27264V9D1 |
| 英文描述： | 2x64Kx72, 3.3V,9ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V，9ns,同步/同步脈沖靜態RAM模塊) |
| 中文描述： | 2x64Kx72，3.3伏，納秒，同步/同步突發靜態存儲器模塊（2x64Kx72，3.3伏，納秒，同步/同步脈沖靜態內存模塊） |
| 文件頁數： | 1/11頁 |
| 文件大小： | 2510K |
| 代理商： | EDI2CG27264V9D1 |
1
EDI2CG27264V
White Electronic Designs Corporation Westborough, MA 01581
(508) 366-5151 www.whiteedc.com
July1999 Rev
ECO
1 Megabyte Sync/Sync Burst, Small Outline DIMM
FEATURES
PIN NAMES
The EDI2CG27264VxxD2 is a Synchronous/Synchronous Burst
SRAM, 72 position DIMM (144 contacts) Module, small outline.
The Module contains four (4) Synchronous Burst Ram Devices,
packaged in the industry standard JEDEC 14mmx20mm TQFP
placed on a Multilayer FR4 Substrate. The module architecture is
defined as a Sync/Sync Burst, Flow-Through, with support for either
linear or sequential burst. This module provides High Performance,
2-1-1-1 accesses when used in Burst Mode, and used as a
Synchronous Only Mode, provides a high performance cost
advantage over BiCMOS aysnchronous device architectures.
Synchronous Only operations are performed via strapping ADSC\
Low, and ADSP\ / ADV\ High, which provides for Ultra Fast
AccessesinReadModewhileprovidingforinternallyself-timedEarly
Writes.
Synchronous/Synchronous Burst operations are in relation to an
externally supplied clock, Registered Address, Registered Global
Write,RegisteredEnablesaswellasanAsynchronousOutputenable.
This Module has been defined for Quad Word access in both Read
and Write Operations.
2x64Kx72 Synchronous, Synchronous Burst
Flow-Through Architecture
Linear and Sequential Burst Support via MODE pin
Clock Controlled Registered Bank Enables (E1\,
E2\)
Clock Controlled Registered Address
Clock Controlled Registered Global Write (GW\)
Aysnchronous Output Enable (G\)
Internally self-timed Write
Individual Bank Sleep Mode enables (ZZ1, ZZ2)
Gold Lead Finish
3.3V +10% Operation
Access Speed(s): TKHQV=8.5, 10, 12, 15ns
Common Data I/O
High Capacitance (30pf) drive, at rated Access
Speed
Single total array Clock
Multiple Vcc and Gnd
DQ0-DQ63
Input/Output Bus
DQP0-DQP7
Parity Bits
A0-A15
Address Bus
E1\, E2\
SynchronousBankEnables
Clk
Array Clock
GW\
Synchronous Global write Enable
G\
Asynchronous Output Enable
ZZ1, ZZ2
Bank Sleep Mode Enables
Vcc
3.3V Power Supply
Vss
Gnd
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| EDI2CG472128V12D2 | 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V，12ns,同步/同步脈沖靜態RAM模塊) |
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相關代理商/技術參數 |
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| EDI2CG472128V | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4 Megabyte Sync/Sync Burst, Dual Key DIMM |
| EDI2CG472128V10D2 | 制造商:EDI 功能描述: |
| EDI2CG472128V12D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4 Megabyte Sync/Sync Burst, Dual Key DIMM |
| EDI2CG472128V15D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4 Megabyte Sync/Sync Burst, Dual Key DIMM |
| EDI2CG472128V85D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4 Megabyte Sync/Sync Burst, Dual Key DIMM |
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