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參數資料
| 型號： | EDI2CG472256V-D2 |
| 英文描述： | SSRAM Modules |
| 中文描述： | 的SSRAM模塊 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 172K |
| 代理商： | EDI2CG472256V-D2 |
EDI2CG272128V
1
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
August 2000 Rev.0
ECO#13088
The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst
SRAM, 72 position DIMM (144 contacts) Module, small outline.
The Module contains four (4) Synchronous Burst Ram Devices,
packaged in the industry standard JEDEC 14mmx20mm TQFP
placed on a Multilayer FR4 Substrate. The module architecture is
defined as a Sync/Sync Burst, Flow-Through, with support for
either linear or sequential burst. This module provides High
Performance, 2-1-1-1 accesses when used in Burst Mode, and
used as a Synchronous Only Mode, provides a high performance
cost advantage over BiCMOS aysnchronous device architectures.
Synchronous Only operations are performed via strapping ADSC
Low, and ADSP / ADV High, which provides for Ultra Fast Accesses
in Read Mode while providing for internally self-timed Early
Writes.
Synchronous/Synchronous Burst operations are in relation to an
externally supplied clock, Registered Address, Registered Global
Write, Registered Enables as well as an Asynchronous Output
enable. This Module has been defined for Quad Word access in
both read and write operations.
FEATURES
s 2x128Kx72 Synchronous, Synchronous Burst
s Flow-Through Architecture
s Linear and Sequential Burst Support via MODE pin
s Access Speed(s): TKHQV = 8.5, 9, 12, 15ns
s Clock Controlled Registered Bank Enables (E1, E2)
s Clock Controlled Registered Address
s Clock Controlled Registered Global Write (GW)
s Aysnchronous Output Enable (G)
s Internally Self-timed Write
s Individual Bank Sleep Mode Enables (ZZ1, ZZ2)
s Gold Lead Finish
s 3.3V
±10% Operation
s Common Data I/O
s High Capacitance (30pF) Drive, at Rated Access Speed
s Single Total Array Clock
s Multiple Vcc and Gnd
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through
相關PDF資料 |
PDF描述 |
|---|---|
| EDI2CG272128V12D1 | 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V，12ns,同步/同步脈沖靜態RAM模塊(流通結構）) |
| EDI2CG272128V15D1 | 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V，15ns,同步/同步脈沖靜態RAM模塊(流通結構）) |
| EDI2CG272128V85D1 | 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V，8.5ns,同步/同步脈沖靜態RAM模塊(流通結構）) |
| EDI2CG272128V9D1 | 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V，9ns,同步/同步脈沖靜態RAM模塊(流通結構）) |
| EDI2CG27264V10D1 | 2x64Kx72, 3.3V,10ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V，10ns,同步/同步脈沖靜態RAM模塊) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| EDI2DL32256V | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256Kx32 Synchronous Pipline Burst SRAM 3.3V |
| EDI2DL32256V35BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256Kx32 Synchronous Pipline Burst SRAM 3.3V |
| EDI2DL32256V38BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
| EDI2DL32256V40BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
| EDI2DL32256V40BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
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