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參數資料
| 型號： | FM680-T |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 80K |
| 代理商： | FM680-T |
FM620-T THRU FM6100-T
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
(V)
(V)
(V)
(V)
(
o
C)
FM620-T
SS62
20
14
20
FM630-T
SS63
30
21
30
FM640-T
SS64
40
28
40
FM650-T
SS65
50
35
50
FM660-T
SS66
60
42
60
FM680-T
SS68
80
56
80
FM6100-T
S610
100
70
100
SYMBOLS
MARKING
CODE
0.55
-55 to +125
V
RRM
*1
V
RMS
*2
V
R
*3
-55 to +150
0.70
0.85
Operating
temperature
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
6.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
150
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
50
mA
Thermal resistance
Junction to ambient
R
q
JA
15
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
380
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMC-T
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
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