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參數資料
| 型號： | FMMT494 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 144K |
| 代理商： | FMMT494 |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
%
PARTMARKING DETAIL
494
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
140
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
140
V
I
C
=100
μ
A
V
CEO(sus)
120
V
I
C
=10mA*
I
E
=100
μ
A
V
(BR)EBO
5
V
Collector Cut-Off Currents
I
CBO
100
nA
V
CB
=120V
I
CES
100
nA
V
CE
=120V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.3
V
V
I
C
=250mA, I
B
=25mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
60
20
300
I
C
=1mA, V
=10V*
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
100
MHz
I
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
C
obo
10
pF
V
CB
=10V, f=1MHz
FMMT494
C
B
E
3 - 121
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FMMT494QTA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 |
| FMMT494QTC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 |
| FMMT494TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT494TC | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT495 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-23 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-23 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, 150V, 1A, 500mW, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100 ;RoHS Compliant: Yes |
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