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參數資料
| 型號： | FZT655 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR |
| 中文描述： | 1 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 90K |
| 代理商： | FZT655 |
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
*
Low saturation voltage
%
COMPLEMENTARY TYPE FZT755
PARTMARKING DETAIL FZT655
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
150
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.1
μ
A
V
CB
=125V
Emitter Cut-Off Current
I
EBO
0.1
μ
A
V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.5
V
V
I
C
=500mA, I
=50mA*
I
C
=1A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
20
300
I
C
=10mA, V
CE
=5V*
I
C
=500mA, V
=5V*
I
C
=1A, V
CE
=5V*
Transition Frequency
f
T
30
MHz
I
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
FZT655
C
C
E
B
3 - 211
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