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參數(shù)資料
型號(hào)： IS42S16800A-7TI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述： 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 18/66頁(yè)
文件大小： 556K
代理商： IS42S16800A-7TI
ISSI
18
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
DD
MAX
V
DDQ
+4.6
V
IN
V
OUT
P
D
MAX
I
CS
T
OPR
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
V
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
–0.5 to +3.6
–0.5 to +4.6
–0.5 to +3.6
V
MAX
–0.5 to
–0.5 to +3.6
–0.5 to +3.6
1
50
0 to +70
–40 to +85
–55 to +125
–0.5 to +4.6
–0.5 to +4.6
1
50
0 to +70
–40 to +85
–55 to +125
V
V
W
mA
°C
Com.
Ind.
T
STG
Storage Temperature
°C
DC RECOMMENDED OPERATING CONDITIONS
(2)
(
At T
A
= 0 to +70°C)
42LSxxxxxx
Typ.
42Sxxxxxx
Typ.
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
V
DD
V
DDQ
V
IH
(1)
V
IL
(2)
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
2.3
1.65
2.5
2.0
—
—
2.7
2.5
3.0
3.0
2.0
-0.3
3.3
3.3
—
—
3.6
3.6
V
V
V
V
0.8xV
DDQ
-0.3
V
DDQ
+ 0.3
+0.3
V
DDQ
+ 0.3
+0.8
CAPACITANCE CHARACTERISTICS
(1,2)
(At T
A
= 0 to +25°C, Vdd = Vdd
Q
= 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
C
IN1
C
IN2
CI/O
Input Capacitance: A0-A11, BA0, BA1
Input Capacitance: (CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
—
—
—
3.5
3.8
6.5
pF
pF
p
ss.
Note:
1. V
IH
(max) = V
DDQ
+1.5V (
PULSE
WIDTH
< 5
NS
).
2. V
IL
(min) = -1.5V (
PULSE
WIDTH
< 5
NS
).
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.
相關(guān)PDF資料
PDF描述
IS42S16800A-10TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10TL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10TLI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TLI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16800A-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16800A-7TLI 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16800A-7TL-TR 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16800A-7T-TR 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16800B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
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