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參數資料
型號: ISL6521CBZS2698
廠商: Intersil
文件頁數: 11/13頁
文件大?。?/td> 639K
描述: IC REG QD BCK/LINEAR 16-SOIC
標準包裝: 480
拓撲: 降壓(降壓)同步(1),線性(LDO)(3)
功能: 任何功能
輸出數: 4
頻率 - 開關: 300kHz
電壓/電流 - 輸出 1: 控制器
電壓/電流 - 輸出 2: 可調式,120mA
電壓/電流 - 輸出 3: 可調式,120mA
帶 LED 驅動器:
帶監控器:
帶序列發生器:
電源電壓: 4.5 V ~ 5.5 V
工作溫度: 0°C ~ 70°C
安裝類型: *
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應商設備封裝: *
包裝: 管件
11
Transistors Selection/Considerations
The ISL6521 can employ up to 5 external transistors. Two
N-channel MOSFETs are used in the synchronous-rectified
buck topology of PWM converter. The linear controllers can
each drive an NPN bipolar transistor as a pass element. All
these transistors should be selected based upon r
DS(ON)
  ,
current gain, saturation voltages, gate/base supply
requirements, and thermal management considerations.
PWM MOSFET Selection and Considerations
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes two
loss components; conduction loss and switching loss. These
losses are distributed between the upper and lower
MOSFETs according to duty factor (see the equations
below). The conduction losses are the main component of
power dissipation for the lower MOSFETs. Only the upper
MOSFET has significant switching losses, since the lower
device turns on and off into near zero voltage.
The equations below assume linear voltage-current
transitions and do not model power loss due to the reverse-
recovery of the lower MOSFETs body diode. The gate-
charge losses are dissipated by the ISL6521 and don't heat
the MOSFETs. However, large gate-charge increases the
switching time, t
SW
 which increases the upper MOSFET
switching losses. Ensure that both MOSFETs are within their
maximum junction temperature at high ambient temperature
by calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
Given the reduced available gate bias voltage (5V) logic-
level or sub-logic-level transistors have to be used for both
N-MOSFETs. Caution should be exercised with devices
exhibiting very low V
GS(ON)
 characteristics, as the low gate
threshold could be conducive to some shoot-through (due to
the Miller effect), in spite of the counteracting circuitry
present aboard the ISL6521.
Rectifier CR1 is a clamp that catches the negative inductor
swing during the dead time between the turn off of the lower
MOSFET and the turn on of the upper MOSFET. The diode
must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is acceptable to
omit the diode and let the body diode of the lower MOSFET
clamp the negative inductor swing, providing the body diode
is fast enough to avoid excessive negative voltage swings at
the PHASE pin. The diode's rated reverse breakdown
voltage must be greater than the maximum input voltage.
Linear Controller Transistor Selection
The main criteria for selection of transistors for the linear
regulators is package selection for efficient removal of heat.
The power dissipated in a linear regulator is:
Select a package and heatsink that maintains the junction
temperature below the rating with a the maximum expected
ambient temperature.
If bipolar NPN transistors have to be used with the linear
controllers, insure the current gain at the given operating
V
CE
 is sufficiently large to provide the desired maximum
output load current when the base is fed with the minimum
driver output current.
P
UPPER
I
O
2
r
DS ON
(  )
?/DIV>
V
OUT
?/DIV>
V
IN
------------------------------------------------------------
I
O
V
IN
?nbsp  t
SW
?nbsp   F
S
?/DIV>
2
----------------------------------------------------
+
=
P
LOWER
I
O
2
r
DS ON
(  )
?/DIV>
V
IN
V
OUT

(
)
?/DIV>
V
IN
---------------------------------------------------------------------------------
=
FIGURE 8. MOSFET GATE BIAS
+5V
PGND
ISL6521
GND
LGATE
UGATE
PHASE
BOOT
+5V OR LESS
NOTE:
NOTE:
V
GS
 H V
CC
 
Q1
Q2
+
-
V
GS
 H V
CC
 -0.5V
CR1
VCC
C
BOOT
VCC
+
P
LINEAR
I
O
V
IN
V
OUT

(
)
?/DIV>
=
ISL6521
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相關代理商/技術參數
參數描述
ISL6521CBZ-T 功能描述:電壓模式 PWM 控制器 4 IN 1 PWM/LINEAR CNTRLR 5V RoHS:否 制造商:Texas Instruments 輸出端數量:1 拓撲結構:Buck 輸出電壓:34 V 輸出電流: 開關頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel
ISL6521CBZ-TS2698 功能描述:IC REG QD BCK/LINEAR 16-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 穩壓器 - 線性 + 切換式 系列:- 標準包裝:2,500 系列:- 拓撲:降壓(降壓)同步(3),線性(LDO)(2) 功能:任何功能 輸出數:5 頻率 - 開關:300kHz 電壓/電流 - 輸出 1:控制器 電壓/電流 - 輸出 2:控制器 電壓/電流 - 輸出 3:控制器 帶 LED 驅動器:無 帶監控器:無 帶序列發生器:是 電源電壓:5.6 V ~ 24 V 工作溫度:-40°C ~ 85°C 安裝類型:* 封裝/外殼:* 供應商設備封裝:* 包裝:*
ISL6521EVAL1 功能描述:EVALUATION BOARD 1 ISL6521 RoHS:否 類別:編程器,開發系統 >> 過時/停產零件編號 系列:- 標準包裝:1 系列:- 傳感器類型:CMOS 成像,彩色(RGB) 傳感范圍:WVGA 接口:I²C 靈敏度:60 fps 電源電壓:5.7 V ~ 6.3 V 嵌入式:否 已供物品:成像器板 已用 IC / 零件:KAC-00401 相關產品:4H2099-ND - SENSOR IMAGE WVGA COLOR 48-PQFP4H2094-ND - SENSOR IMAGE WVGA MONO 48-PQFP
ISL6521EVAL1Z 功能描述:EVALUATION BOARD 1 ISL6521 RoHS:是 類別:編程器,開發系統 >> 評估板 - DC/DC 與 AC/DC(離線)SMPS 系列:- 產品培訓模塊:Obsolescence Mitigation Program 標準包裝:1 系列:True Shutdown™ 主要目的:DC/DC,步升 輸出及類型:1,非隔離 功率 - 輸出:- 輸出電壓:- 電流 - 輸出:1A 輸入電壓:2.5 V ~ 5.5 V 穩壓器拓撲結構:升壓 頻率 - 開關:3MHz 板類型:完全填充 已供物品:板 已用 IC / 零件:MAX8969
ISL6521IBZ 功能描述:電壓模式 PWM 控制器 4 IN 1 PWM/LINEAR CNTRLR 5V RoHS:否 制造商:Texas Instruments 輸出端數量:1 拓撲結構:Buck 輸出電壓:34 V 輸出電流: 開關頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel
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