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參數資料
| 型號： | JAN2N1131L |
| 英文描述： | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39VAR |
| 中文描述： | 晶體管|晶體管|進步黨| 35V的五（巴西）總裁| 600毫安一（c）|至39VAR |
| 文件頁數： | 1/21頁 |
| 文件大小： | 137K |
| 代理商： | JAN2N1131L |
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料 |
PDF描述 |
|---|---|
| JAN2N1132 | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39 |
| JAN2N1132L | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39VAR |
| JAN2N1165 | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 25A I(C) | TO-41 |
| JAN2N1183 | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | TO-8 |
| JAN2N1183A | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-8 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JAN2N1132 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 |
| JAN2N1132-2 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JAN2N1132L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-5 |
| JAN2N1142 | 制造商:n/a 功能描述:2N1142 N12I7E |
| JAN2N1165 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 25A I(C) | TO-41 |
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