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參數資料
型號: KDR367
廠商: KEC Holdings
英文描述: SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
中文描述: 肖特基型二極管(低壓高速開關)
文件頁數: 1/2頁
文件大小: 394K
代理商: KDR367
2003. 2. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR367
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(2)
=0.23V (Typ.)
Small Package : USC.
MAXIMUM RATING (Ta=25
)
USC
DIM
MILLIMETERS
+
+
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25+
0.90 0.05
0.30+0.06/-0.04
1.70+
MIN 0.17
0.126+
0~0.1
0.15 0.05
+
+
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
C
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
15
V
Reverse Voltage
V
R
10
V
Maximum (Peak) Forward Current
I
FM
200
mA
Average Forward Current
I
O
100
mA
Surge Current (10ms)
I
FSM
1
A
Power Dissipation
P
D
200*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55
125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.18
-
V
V
F(2)
I
F
=5mA
-
0.23
0.30
V
F(3)
I
F
=100mA
-
0.35
0.50
Reverse Current
I
R
V
R
=10V
-
-
20
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
20
40
pF
* : Mounted on a glass epoxy circuit board of 20
pad dimension of 4
20mm,
4mm.
Type Name
Marking
S
U
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相關代理商/技術參數
參數描述
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