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參數(shù)資料
| 型號(hào)： | KDR378 |
| 廠商： | KEC Holdings |
| 英文描述： | SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING) |
| 中文描述： | 肖特基型二極管（高速開關(guān)） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 65K |
| 代理商： | KDR378 |
2001. 11. 29
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR378
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F
=0.24(Typ.) I
F
=5mA
MAXIMUM RATING (Ta=25
)
DIM
A
MILLIMETERS
2.00 0.20
1.25 0.15
0.90+
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
0.42+
0.10 MIN
B
C
D
E
G
H
J
K
L
M
N
1. ANODE 1
2. ANODE 2
3. CATHODE
USM
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
3
2
1
+
+
+
* : Mounted on a glass epoxy circuit board of 20
20mm,
pad dimension of 4
4mm.
ELECTRICAL CHARACTERISTICS (Ta=25
)
Marking
X 3
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.19
-
V
V
F(2)
I
F
=5mA
-
0.24
-
V
F(3)
I
F
=100mA
-
0.39
0.50
Reverse Current
I
R
V
R
=10V
-
-
20
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
14
30
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
15
V
Reverse Voltage
V
R
10
V
Average Forward Current
I
O
0.1
A
Non-repetitive Peak Surge Current
I
FSM
1
A
Power Dissipation
P
D
200*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55
125
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| KDR378E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING) |
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