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參數資料
| 型號： | KM44V16104B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態RAM(帶擴展數據輸出)) |
| 中文描述： | 16米x 4位的擴展數據輸出的CMOS動態RAM（1,600 × 4位的CMOS動態隨機存儲器（帶擴展數據輸出）） |
| 文件頁數： | 1/21頁 |
| 文件大小： | 367K |
| 代理商： | KM44V16104B |
KM44V16004B,
KM44V16104B
CMOS DRAM
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5, or -6), power consumption(Normal
or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh
capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Sam-
sung
′
s advanced CMOS process to realize high band-width, low power consumption and high reliability.
Part Identification
- KM44V16004B/B-L(3.3V, 8K Ref.)
- KM44V16104B/B-L(3.3V, 4K Ref.)
Extended Data Out Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability
LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+3.3V
±
0.3V power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Memory Array
16,777,216 x 4
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
L-ver
KM44V16004B*
KM44V16104B
8K
4K
64ms
128ms
Unit : mW
S
DQ0
to
DQ3
Data out
Buffer
Data in
Buffer
*
Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Active Power Dissipation
Speed
-45
-5
-6
8K
360
324
288
4K
468
432
396
Performance Range
Speed
-45
-5
-6
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
74ns
84ns
104ns
t
HPC
17ns
20ns
25ns
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
相關PDF資料 |
PDF描述 |
|---|---|
| KM44V16004B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態RAM(帶擴展數據輸出)) |
| KM44V16104C | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態RAM(帶擴展數據輸出)) |
| KM44V16004C | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態RAM(帶擴展數據輸出)) |
| KM48C514D | High Speed 512K x 8Bit CMOS Dynamic RAM with Extended Data Out(高速512K x 8位 CMOS 動態RAM(帶擴展數據輸出)) |
| KM48C8100B | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動態RAM(帶快速頁模式)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
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