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參數資料
| 型號： | KM6161002AI |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態RAM) |
| 中文描述： | 64K的× 16位高速CMOS靜態RAM（64K的× 16位高速的CMOS靜態RAM）的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 149K |
| 代理商： | KM6161002AI |
KM6161002A, KM6161002AI
CMOS SRAM
PRELIMINARY
Rev 4.0
- 1 -
February 1998
Document Title
64Kx16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Remark
Preliminary
Final
Final
Final
Final
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
Update D.C parameters.
2.1. Update D.C parameters.
I
tems
Add Industrial Temperature Range parts
3.1. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
3.1.1. Add KM6161002AI parts for Industrial Temperature
Range.
3.1.2. Add ordering information.
3.1.3. Add the condition for operating at Industrial Temp. Range.
3.2. Add the test condition for V
OH1
with Vcc=5V
±
5% at 25
°
C
3.3. Add timing diagram to define t
WP1
as
″(
Timing Wave Form of
Write Cycle(OE=Low fixed)
″
4.1. Delete 17ns Part
Previous spec.
(12/15/17/20ns part)
220/210/200/190mA
30mA
10mA
Updated spec.
(12/15/17/20ns part)
190/185/185/180mA
25mA
8mA
I
CC
I
SB
I
SB1
Draft Data
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
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| KM6161002AI-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
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