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參數資料
| 型號： | KRX105E |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| 中文描述： | 外延平面npn型/ PNP晶體管（開關，接口電路及驅動電路） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 80K |
| 代理商： | KRX105E |
2002. 1. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KRX105E
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TESV.
(Thin Extreme Super mini type with 5 pin.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
A1
B
MILLIMETERS
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2+
0.5+
0.12 0.05
5
B1
C
D
H
J
P
TESV
B1
B
D
A
A
C
C
J
H
1
2
3
5
4
P
P
+
+
+
+
+
1. Q COMMON (EMITTER)
2. Q IN (BASE)
3. Q COMMON (EMITTER)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
Q IN (BASE)
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25
)
R1
C
E
B
R1
C
E
B
Q
1
R1=4.7K
(Q , Q COMMON)
Q
2
1
Q1
2
3
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
BE
Type Name
1
2
3
4
5
Q2 MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q1, Q2 MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
-50
-50
-5
-100
UNIT
V
V
V
CHARACTERISTIC
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
UNIT
Power Dissipation
Junction Temperature
Storage Temperature Range
-55
150
Marking
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
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| KRX201U | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| KRX202E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
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