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參數(shù)資料
| 型號： | KSC3569 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed Switching Application |
| 中文描述： | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 57K |
| 代理商： | KSC3569 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
* PW
≤
350
μ
s, Duty Cycle
≤
10%
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
V
CEX
(sus)1
Collector-Emitter Sustaining Voltage
* Pulse Test: PW
≤
350
μ
s, Duty Cycle
≤
2% Pulsed
h
FE
Classification
Classification
h
FE1
Parameter
Value
500
400
7
2
4
1
15
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
Min.
400
450
Max.
Units
V
V
I
C
= 0.5A, I
B1
= 0.1A, L = 1mH
I
C
= 0.5A, I
B1
= -I
B2
= 0.1A
T
a
= 125
°
C, L = 180
μ
H, Clamped
I
C
= 1A, I
B1
= -I
B2
= 0.2A,
T
a
= 125
°
C, L = 180
μ
H, Clamped
V
CB
= 400V, I
E
= 0
V
CE
= 400V, R
BE
= 51
@
T
C
= 125
°
C
V
CE
= 400V, V
BE
(off) = -5V
V
CE
= 400V, V
BE
(off) = -5V @
T
C
= 125
°
C
V
BE
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 0.5A, I
B
= 0.1A
V
CC
= 150V, I
C
= 0.5A
I
B1
= -I
B2
= 0.1A
R
L
= 300
V
CEX
(sus)2
Collector-Emitter Sustaining Voltage
400
V
I
CBO
I
CER
Collector Cut-off Current
Collector Cut-off Current
10
1
μ
A
mA
I
CEX1
I
CEX2
Collector Cut-off Current
Collector Cut-off Current
10
1
μ
A
mA
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Emitter Cut-off Current
* DC Current Gain
10
80
μ
A
20
10
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
1
1.2
1
2.5
1
V
V
μ
s
μ
s
μ
s
-
R
O
Y
20 ~ 40
30 ~ 60
40 ~ 80
KSC3569
High Speed Switching Application
Low Collector Saturation Voltage
Specified of Reverse Biased SOA With Inductive Loads
1
1.Base 2.Collector 3.Emitter
TO-220F
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| KSC3569YTU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| KSC361G70LFG | 制造商:CK-COMPONENTS 制造商全稱:C&K Components 功能描述:Sealed Tact Switch for SMT |
| KSC361G70LFS | 制造商:CK-COMPONENTS 制造商全稱:C&K Components 功能描述:Sealed Tact Switch for SMT |
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