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參數資料
| 型號： | KTD1691 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
| 中文描述： | 外延平面NPN晶體管（低集電極飽和電壓大電流） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 396K |
| 代理商： | KTD1691 |
2003. 7. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1691
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : P
C
=1.5W(Ta=25
Complementary to KTB1151.
)
MAXIMUM RATING (Ta=25
)
TO-126
H
J
MILLIMETERS
8.3 MAX
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
5.8
0.7
Φ
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
15.50 0.5
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
DC
I
C
5
A
Pulse *
I
CP
8
Base Current
I
B
1
A
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=7V, I
C
=0
-
-
10
A
DC Current Gain *
h
FE
1
V
CE
=1V, I
C
=0.1A
60
-
-
h
FE
2 (Note)
V
CE
=1V, I
C
=2A
160
-
400
h
FE
3
V
CE
=2V, I
C
=5A
50
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
0.1
0.3
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=2A, I
B
=0.2A
-
0.9
1.2
V
Switching
Time
Turn On Time
t
on
I
B1
5
B1
I
V =10V
I
B2
I
B2
20
μ
sec
I =-I =0.2A
DUTY CYCLE
1%
OUTPUT
INPUT
<
-
0.2
1
S
Storage Time
t
stg
-
1.1
2.5
Fall Time
t
f
-
0.2
1
* Pulse test : PW
Note) h
FE
(2) Classification : O:160
50 S, Duty Cycle
2% Pulse
320, Y:200
400.
* PW
10ms, Duty Cycle
50%
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