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參數資料
| 型號： | MMBFU310LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數： | 1/35頁 |
| 文件大小： | 372K |
| 代理商： | MMBFU310LT3 |
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4–186
Motorola Small–Signal Transistors, FETs and Diodes Device Data
JFET Transistor
N–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Gate–Source Voltage
VGS
25
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
DEVICE MARKING
MMBFU310LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 Adc, VDS = 0)
V(BR)GSS
–25
—
Vdc
Gate 1 Leakage Current (VGS = –15 Vdc, VDS = 0)
IG1SS
—
– 150
pA
Gate 2 Leakage Current (VGS = –15 Vdc, VDS = 0, TA = 125°C)
IG2SS
—
– 150
nAdc
Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc)
VGS(off)
– 2.5
– 6.0
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0)
IDSS
24
60
mAdc
Gate–Source Forward Voltage (IG = 10 mAdc, VDS = 0)
VGS(f)
—
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
10
18
mmhos
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
—
250
mhos
Input Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
—
5.0
pF
Reverse Transfer Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
—
2.5
pF
1. FR– 5 = 1.0
0.75 0.062 in.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBFU310LT1
Motorola Preferred Device
1
2
3
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
2 SOURCE
3
GATE
1 DRAIN
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