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參數資料
| 型號： | MPQ6600A1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 45 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁數： | 1/34頁 |
| 文件大小： | 330K |
| 代理商： | MPQ6600A1 |
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2–471
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad Complementary Pair
Transistors
NPN/PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPQ6100A
MPQ6600A1
Unit
Collector – Emitter Voltage
VCEO
45
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
500
4.0
900
7.2
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
0.825
6.7
2.4
19.2
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance(1)
Each Die
Effective, 4 Die
151
52
250
139
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70
26
%
1. R
θJA is measured with the device soldered into a typical printed circuit board.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPQ6100A
MPQ6600A1
*Motorola Preferred Device
CASE 646–06, STYLE 1
TO–116
1
14
*
Voltage and Current are negative
for PNP Transistors
12
3
4
5
6
7
14
13
12
11
10
9
8
12
3
4
5
6
7
14
13
12
11
10
9
8
COMPLEMENTARY
MPQ6100A
TYPE A
MPQ6600A1
TYPE B
REV 2
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