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參數資料
| 型號： | MPS2222ZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數： | 1/36頁 |
| 文件大?。?/td> | 388K |
| 代理商： | MPS2222ZL1 |
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2–534
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPS2222
MPS2222A
Unit
Collector – Emitter Voltage
VCEO
30
40
Vdc
Collector – Base Voltage
VCBO
60
75
Vdc
Emitter – Base Voltage
VEBO
5.0
6.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
MPS2222
(IC = 10 mAdc, IB = 0)
MPS2222A
V(BR)CEO
30
40
—
Vdc
Collector – Base Breakdown Voltage
MPS2222
(IC = 10 mAdc, IE = 0)
MPS2222A
V(BR)CBO
60
75
—
Vdc
Emitter – Base Breakdown Voltage
MPS2222
(IE = 10 mAdc, IC = 0)
MPS2222A
V(BR)EBO
5.0
6.0
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222A
ICEX
—
10
nAdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
MPS2222
(VCB = 60 Vdc, IE = 0)
MPS2222A
(VCB = 50 Vdc, IE = 0, TA = 125°C)
MPS2222
(VCB = 50 Vdc, IE = 0, TA = 125°C)
MPS2222A
ICBO
—
0.01
10
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
MPS2222A
IEBO
—
100
nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222A
IBL
—
20
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS2222
MPS2222A
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
COLLECTOR
3
2
BASE
1
EMITTER
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| MPS2369 | 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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