- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98035 > MPSW10RL (ON SEMICONDUCTOR) 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號： | MPSW10RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 18/34頁 |
| 文件大小： | 337K |
| 代理商： | MPSW10RL |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當(dāng)前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
9–13
Reliability and Quality Assurance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Table 1–2 – Time Dependent Failure Mechanisms in Semiconductor Devices
(Applicable to Discrete and Integrated Circuits)
Device
Association
Process
Relevant
Factors
Accelerating
Factors
Typical
Activation
Energy in eV
Model
Reference
Silicon Oxide
Silicon–Silicon
Oxide Interface
Metallization
Bond and Other
Mechanical Interfaces
Various Water Fab,
Assembly, and
Silicon Defects
Surface Charges
Inversion, Accumulation
Oxide Pinholes
Dielectric Breakdown
(TDDB)
Charge Loss
Electromigration
Corrosion
Chemical
Galvanic
Electrolytic
Intermetallic
Growth
Metal Scratches
Mask Defects, etc.
Silicon Defects
Mobile Ions
E/V, T
E, T
T, J
Grain Size
Doping
Contamination
T, Impurities
Bond Strength
T, V
E, T
J, T
H, E/V, T
T
T, V
1.0
0.7–1.0 (Bipolar)
1.0 (Bipolar)
0.3–0.4 (MOS)
0.3 (MOS)
0.8 (MOS)
EPROM
1.0 Large grain Al
(glassivated)
0.5
Small grain Al
0.7 Cu–Al/Cu–Si–Al
(sputtered)
0.6–0.7
(for electrolysis)
E/V may have
thresholds
1.0 (Au/Al)
0.5–0.7 eV
0.5 eV
Fitch, et al.
Peck
1984 WRS
Hokari, et al.
Domangue, et al.
Crook, D.L.
Gear, G.
Nanda, et al.
Black, J.R.
Lycoudes, N.E.
Fitch, W.T
Howes, et al.
MMPD
1A
2
18
5
3
4
11
6
7
12
8
9
10
13
V = voltage; E = electric field; T = temperature; J = current density; H = humidity
NO. REFERENCE
1A
1.0 eV activation for leakage type failures.
Fitch, W.T.; Greer, P.; Lycoudes, N.; ‘‘Data to Support 0.001%/1000
Hours for Plastic I/C’s.’’ Case study on linear product shows 0.914 eV
activation energy which is within experimental error of 0.9 to 1.3 eV
activation energies for reversible leakage (inversion) failures reported
in the literature.
1B
0.7 To 1.0 eV for oxide defect failures for bipolar structures. This is
under investigation subsequent to information obtained from 1984
Wafer Reliability Symposium, especially for bipolar capacitors with
silicon nitride as dielectric.
2
1.0 eV activation for leakage type failures.
Peck, D.S.; ‘‘New Concerns About Integrated Circuit Reliability’’ 1978
Reliability Physics Symposium.
3
0.36 eV for dielectric breakdown for MOS gate structures.
Domangue, E.; Rivera, R.; Shedard, C.; ‘‘Reliability Prediction Using
Large MOS Capacitors’’, 1984 Reliability Physics Symposium.
4
0.3 eV for dielectric breakdown.
Crook, D.L.; ‘‘Method of Determining Reliability Screens for Time
Dependent Dielectric Breakdown’’, 1979 Reliability Physics
Symposium.
5
1.0 eV for dielectric breakdown.
Hokari, Y.; et al.; IEDM Technical Digest, 1982.
6
1.0 eV for large grain Al–Si (compared to line width).
Nanda, Vangard, Gj–P; Black, J.R.; ‘‘Electromigration of Al–Si Alloy
Films’’, 1978 Reliability Physics Symposium.
7
0.5 eV Al, 0.7 eV Cu–Al small grain (compared to line width).
Black, J.R.; ‘‘Current Limitation of Thin Film Conductor’’ 1982 Reli-
ability Physics Symposium.
8
0.65 eV for corrosion mechanism.
Lycoudes, N.E.; ‘‘The Reliability of Plastic Microcircuits in Moist
Environments’’, 1978 Solid State Technology.
9
1.0 eV for open wires or high resistance bonds at the pad bond
due to Au–Al intermetallics.
Fitch, W.T.; ‘‘Operating Life vs Junction Temperatures for Plastic
Encapsulated I/C (1.5 mil Au wire)’’, unpublished report.
10
0.7 eV for assembly related defects.
Howes, M.G.; Morgan, D.V.; ‘‘Reliability and Degradation, Semi-
conductor Devices and CIrcuits’’ John Wiley and Sons, 1981.
11
Gear, G.; ‘‘FAMOUS PROM Reliability Studies’’, 1976 Reliability
Physics Symposium.
12
Black, J.R.: unpublished report.
13
Motorola Memory Products Division; unpublished report.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSW10RLRE | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARLRA | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARL1 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARL | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51RLRM | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW13 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Darlington Transistors(NPN Silicon) |
| MPSW13RLRA | 功能描述:達(dá)林頓晶體管 1A 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSW13RLRAG | 功能描述:達(dá)林頓晶體管 1A 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSW14 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Darlington Transistors(NPN Silicon) |
| MPSW3725 | 功能描述:兩極晶體管 - BJT NPN Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。